Електронні частин : HGT1S1N120BNDS

Виробник : Intersil Corporation

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Опис : 5.3A, 1200V, SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

Температура : Хв °C | Макс °C

Datasheet : HGT1S1N120BNDS PDF

• HGT1S1N120
• HGT1S1N120BNDS
• HGT1S1N120BNDS9A
• HGT1S1N120CNDS
• HGT1S1N120CNDS9A